Invention Grant
- Patent Title: Memory device with dynamic storage mode control
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Application No.: US17196934Application Date: 2021-03-09
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Publication No.: US11544188B2Publication Date: 2023-01-03
- Inventor: Yun Li , Kishore Kumar Muchherla , Peter Feeley , Ashutosh Malshe , Daniel J. Hubbard , Christopher S. Hale , Kevin R. Brandt , Sampath K. Ratnam
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Perkins Coie LLP
- Main IPC: G06F12/00
- IPC: G06F12/00 ; G06F12/02 ; G06F12/0891
Abstract:
Memory circuits including dynamically configurable cache cells are disclosed herein. The cache cells may be selectively and dynamically configured to select one or more bits per cell according to a real-time determination or characterization of a workload type.
Public/Granted literature
- US20210191858A1 MEMORY DEVICE WITH DYNAMIC STORAGE MODE CONTROL Public/Granted day:2021-06-24
Information query
