Invention Grant
- Patent Title: MEMS apparatus with anti-stiction layer
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Application No.: US16934236Application Date: 2020-07-21
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Publication No.: US11542151B2Publication Date: 2023-01-03
- Inventor: Kuei-Sung Chang , Fei-Lung Lai , Shang-Ying Tsai , Cheng Yu Hsieh
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Eschweiler & Potashnik, LLC
- Main IPC: B81B3/00
- IPC: B81B3/00 ; B81C1/00

Abstract:
The present disclosure relates to a microelectromechanical systems (MEMS) apparatus. The MEMS apparatus includes a base substrate and a conductive routing layer disposed over the base substrate. A bump feature is disposed directly over the conductive routing layer. Opposing outermost sidewalls of the bump feature are laterally between outermost sidewalls of the conductive routing layer. A MEMS substrate is bonded to the base substrate and includes a MEMS device directly over the bump feature. An anti-stiction layer is arranged on one or more of the bump feature and the MEMS device.
Public/Granted literature
- US20200346919A1 MEMS APPARATUS WITH ANTI-STICTION LAYER Public/Granted day:2020-11-05
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