Invention Grant
- Patent Title: Electrostatic discharge protection circuit having time-extended discharging mechanism
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Application No.: US17327808Application Date: 2021-05-24
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Publication No.: US11495963B2Publication Date: 2022-11-08
- Inventor: Shih-Hsin Liao , Jyun-Ren Chen , Tay-Her Tsaur , Po-Ching Lin
- Applicant: REALTEK SEMICONDUCTOR CORPORATION
- Applicant Address: TW Hsinchu
- Assignee: REALTEK SEMICONDUCTOR CORPORATION
- Current Assignee: REALTEK SEMICONDUCTOR CORPORATION
- Current Assignee Address: TW Hsinchu
- Agency: WPAT, PC
- Priority: TW109140342 20201118
- Main IPC: H02H9/04
- IPC: H02H9/04

Abstract:
The present invention discloses an electrostatic discharge protection circuit having time-extended discharging mechanism. A RC circuit is coupled between an ESD input terminal that receives an ESD input and a ground terminal and includes an input control terminal. An inverter includes a P-type transistor coupled between the ESD input terminal and an output control terminal and an N-type transistor circuit including N-type transistors coupled in series and between the output control terminal and a ground terminal, wherein two of the N-type transistors has an internal connection terminal. Gates of the P-type transistor and N-type transistors are controlled by the input control terminal. A switch transistor is coupled between the ESD input terminal and the internal connection terminal. A discharging transistor is coupled between the ESD input terminal and the ground terminal. The gates of the switch transistor and the discharging transistor are controlled by the output control terminal.
Public/Granted literature
- US20220158445A1 Electrostatic discharge protection circuit having time-extended discharging mechanism Public/Granted day:2022-05-19
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