Invention Grant
- Patent Title: Semiconductor device
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Application No.: US16804371Application Date: 2020-02-28
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Publication No.: US11495960B2Publication Date: 2022-11-08
- Inventor: Makoto Yasusaka , Isamu Iwahashi , Kotaro Iwata
- Applicant: Rohm Co., Ltd.
- Applicant Address: JP Kyoto
- Assignee: Rohm Co., Ltd.
- Current Assignee: Rohm Co., Ltd.
- Current Assignee Address: JP Kyoto
- Agency: Fish & Richardson P.C.
- Priority: JPJP2019-041792 20190307,JPJP2019-041796 20190307,JPJP2019-041798 20190307
- Main IPC: H02H7/20
- IPC: H02H7/20 ; H01L27/02 ; H02H9/02

Abstract:
A semiconductor device includes, for example, an external terminal, an output element, a detecting element configured to detect occurrence of a negative voltage at the external terminal, and an off-circuit configured to forcibly turn off the output element when the detecting element detects occurrence of the negative voltage.
Public/Granted literature
- US20200287376A1 Semiconductor Device Public/Granted day:2020-09-10
Information query
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