Invention Grant
- Patent Title: Patterned epitaxial substrate and semiconductor structure
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Application No.: US17243577Application Date: 2021-04-29
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Publication No.: US11495709B2Publication Date: 2022-11-08
- Inventor: Kuang-Yuan Hsu , Chien-Chih Yen , Yen-Lin Lai , Shen-Jie Wang , Sheng-Yuan Sun
- Applicant: PlayNitride Display Co., Ltd.
- Applicant Address: TW MiaoLi County
- Assignee: PlayNitride Display Co., Ltd.
- Current Assignee: PlayNitride Display Co., Ltd.
- Current Assignee Address: TW MiaoLi County
- Agency: JCIPRNET
- Priority: TW108117777 20190523
- Main IPC: H01L33/20
- IPC: H01L33/20 ; H01L33/50 ; H01L33/22

Abstract:
A patterned epitaxial substrate includes a substrate and a plurality of patterns. The substrate has a first zone and a second zone surrounding the first zone. The first zone is disposed around a center of the substrate. The patterns and the substrate are integrally formed, and the patterns are disposed on the substrate. The patterns include a plurality of first patterns and a plurality of second patterns. The first patterns are disposed in the first zone. The second patterns are disposed in the second zone. Sizes of the first patterns are different from sizes of the second patterns.
Public/Granted literature
- US20210265527A1 PATTERNED EPITAXIAL SUBSTRATE AND SEMICONDUCTOR STRUCTURE Public/Granted day:2021-08-26
Information query
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