Invention Grant
- Patent Title: Semiconductor devices and methods of manufacturing thereof
-
Application No.: US16926258Application Date: 2020-07-10
-
Publication No.: US11495677B2Publication Date: 2022-11-08
- Inventor: Yi-Ruei Jhan , Kuan-Ting Pan , Kuo-Cheng Chiang , Kuan-Lun Cheng , Chih-Hao Wang
- Applicant: Taiwan Semiconductor Manufacturing Company Limited
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company Limited
- Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
- Current Assignee Address: TW Hsinchu
- Agency: Foley & Lardner LLP
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/66 ; H01L21/8234 ; H01L27/088 ; H01L29/165
Abstract:
A semiconductor device includes a first active fin structure and a second active fin structure extending along a first lateral direction. The semiconductor device includes a dummy fin structure, also extending along the first lateral direction, that is disposed between the first active fin structure and the second fin structure. The dummy fin structure includes a material that is configured to induce mechanical deformation of a first source/drain structure coupled to an end of the first active fin structure and a second source/drain structure coupled to an end of the second active fin structure.
Public/Granted literature
- US20220013653A1 SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF Public/Granted day:2022-01-13
Information query
IPC分类:
