Invention Grant
- Patent Title: Pin mesa diodes with over-current protection
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Application No.: US16785098Application Date: 2020-02-07
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Publication No.: US11495631B2Publication Date: 2022-11-08
- Inventor: Wei Huang , Douglas Stewart Malchow , Michael J. Evans , John Liobe , Wei Zhang
- Applicant: Sensors Unlimited, Inc.
- Applicant Address: US NJ Princeton
- Assignee: Sensors Unlimited, Inc.
- Current Assignee: Sensors Unlimited, Inc.
- Current Assignee Address: US NJ Princeton
- Agency: Locke Lord LLP
- Agent Joshua L. Jones; Scott D. Wofsy
- Main IPC: H01L27/146
- IPC: H01L27/146

Abstract:
A system includes a pixel including a diffusion layer in contact with an absorption layer. The diffusion layer and absorption layer are in contact with one another along an interface that is inside of a mesa. A trench is defined in the absorption layer surrounding the mesa. An overflow contact is seated in the trench.
Public/Granted literature
- US20210249462A1 PIN MESA DIODES WITH OVER-CURRENT PROTECTION Public/Granted day:2021-08-12
Information query
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