Invention Grant
- Patent Title: Method of fabricating device having inductor
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Application No.: US16678802Application Date: 2019-11-08
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Publication No.: US11495528B2Publication Date: 2022-11-08
- Inventor: Wen-Shiang Liao
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Maschoff Brennan
- Main IPC: H01L23/14
- IPC: H01L23/14 ; H01L23/498

Abstract:
A device includes an interposer, a plurality of conductive through vias (TVs), a conductive element, and a redistribution line (RDL). The conductive TVs extend from a bottom surface of the interposer to a top surface of the interposer. The conductive element is over the bottom surface of the interposer. The RDL is over the top surface of the interposer. The RDL, the conductive TVs, and the conductive element are connected to form an inductor.
Public/Granted literature
- US20200075471A1 METHOD OF FABRICATING DEVICE HAVING INDUCTOR Public/Granted day:2020-03-05
Information query
IPC分类: