Invention Grant
- Patent Title: Semiconductor devices
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Application No.: US17353267Application Date: 2021-06-21
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Publication No.: US11495286B2Publication Date: 2022-11-08
- Inventor: Woongrae Kim
- Applicant: SK hynix Inc.
- Applicant Address: KR Icheon-si
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Icheon-si
- Agency: William Park & Associates Ltd.
- Priority: KR10-2018-0028439 20180312
- Main IPC: G11C11/4096
- IPC: G11C11/4096 ; G11C11/408 ; G11C11/4093

Abstract:
A semiconductor device includes a read write control circuit configured to generate first and second write command pulses from an external control signal for performing a write operation; a flag generation circuit configured to generate a write flag, a write shifting flag, an internal write flag and an internal write shifting flag based on the second write command pulse, a bank mode signal and a bank group mode signal; and a bank group selection signal generation circuit configured to store a bank address based on an write input control pulse generated from the second write command pulse in a bank mode, and output the stored bank address as a bank group selection signal based on a write output control pulse generated from the write flag.
Public/Granted literature
- US20210312974A1 SEMICONDUCTOR DEVICES Public/Granted day:2021-10-07
Information query
IPC分类: