Invention Grant
- Patent Title: Semiconductor device
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Application No.: US16664167Application Date: 2019-10-25
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Publication No.: US11489524B2Publication Date: 2022-11-01
- Inventor: Takashi Tomita , Manabu Furuta
- Applicant: LAPIS Semiconductor Co., Ltd.
- Applicant Address: JP Yokohama
- Assignee: LAPIS Semiconductor Co., Ltd.
- Current Assignee: LAPIS Semiconductor Co., Ltd.
- Current Assignee Address: JP Yokohama
- Agency: Rabin & Berdo, P.C.
- Priority: JPJP2018-202824 20181029
- Main IPC: H03K19/0175
- IPC: H03K19/0175 ; G09G3/20

Abstract:
A semiconductor device includes: a pair of input terminals or receiving a first input signal and a second input signal each of which changes between potentials in a predetermined range via a pair of transmission paths which include a first transmission path and a second transmission path; a first reception circuit which compares in potential the first input signal with the second input signal, and generates a first output signal based on a comparison result therebetween; a second reception circuit which generates a second output signal based on a comparison result of comparing in potential at least one of the first input signal and the second input signal with a reference potential.
Information query
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