Invention Grant
- Patent Title: Charge pump circuit
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Application No.: US17445598Application Date: 2021-08-21
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Publication No.: US11489443B2Publication Date: 2022-11-01
- Inventor: Haining Xu
- Applicant: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Applicant Address: CN Anhui
- Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee Address: CN Anhui
- Agency: Syncoda LLC
- Agent Feng Ma
- Priority: CN202010170686.4 20200312
- Main IPC: H02M3/07
- IPC: H02M3/07 ; H03L7/093

Abstract:
A charge pump circuit includes: a charge pump core circuit configured to generate an output voltage, an oscillator configured to provide a clock signal for the charge pump core circuit, and a feedback circuit configured to control the oscillator based on the output voltage, wherein the feedback circuit includes an inner loop.
Public/Granted literature
- US20210408900A1 CHARGE PUMP CIRCUIT Public/Granted day:2021-12-30
Information query
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