Invention Grant
- Patent Title: BiSb topological insulator with seed layer or interlayer to prevent sb diffusion and promote BiSb (012) orientation
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Application No.: US16861118Application Date: 2020-04-28
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Publication No.: US11489108B2Publication Date: 2022-11-01
- Inventor: Quang Le , Cherngye Hwang , Brian R. York , Andrew Chen , Thao A. Nguyen , Yongchul Ahn , Xiaoyong Liu , Hongquan Jiang , Zheng Gao , Kuok San Ho
- Applicant: Western Digital Technologies, Inc.
- Applicant Address: US CA San Jose
- Assignee: Western Digital Technologies, Inc.
- Current Assignee: Western Digital Technologies, Inc.
- Current Assignee Address: US CA San Jose
- Agency: Patterson & Sheridan, LLP
- Agent Steven H. VerSteeg
- Main IPC: H01L29/82
- IPC: H01L29/82 ; H01L43/04 ; H01L27/22 ; H01L43/06 ; H01L43/10 ; H01F10/32 ; G11B5/39 ; G11B5/00
Abstract:
A spin-orbit torque (SOT) magnetic tunnel junction (MTJ) device includes a substrate, a seed layer over the substrate, and a bismuth antimony (BiSb) layer having (0120) orientation on the seed layer. The seed layer includes a silicide layer and a surface control layer. The silicide layer includes a material of NiSi, NiFeSi, NiFeTaSi, NiCuSi, CoSi, CoFeSi, CoFeTaSi, CoCuSi, or combinations thereof. The surface control layer includes a material of NiFe, NiFeTa, NiTa, NiW, NiFeW, NiCu, NiCuM, NiFeCu, CoTa, CoFeTa, NiCoTa, Co, CoM, CoNiM, CoNi, NiSi, CoSi, NiCoSi, Cu, CuAgM, CuM, or combinations thereof, in which M is Fe, Cu, Co, Ta, Ag, Ni, Mn, Cr, V, Ti, or Si.
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