Invention Grant
- Patent Title: Light emitting device with two vertically-stacked light emitting cells
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Application No.: US16907143Application Date: 2020-06-19
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Publication No.: US11489089B2Publication Date: 2022-11-01
- Inventor: Shiou-Yi Kuo , Jian-Chin Liang , Chien-Nan Yeh
- Applicant: Lextar Electronics Corporation
- Applicant Address: TW Hsinchu
- Assignee: Lextar Electronics Corporation
- Current Assignee: Lextar Electronics Corporation
- Current Assignee Address: TW Hsinchu
- Agency: CKC & Partners Co., LLC
- Main IPC: H01L33/08
- IPC: H01L33/08 ; H01L33/42 ; H01L33/22 ; H01L33/62

Abstract:
A light emitting device includes a first light emitting cell and a second light emitting cell. Each light emitting cell includes a first semiconductor layer, a second semiconductor layer, and an active layer between the first and second semiconductor layers. The second semiconductor layer of the second light emitting cell has an exposed surface. A transparent bonding layer is located between the first and second light emitting cells. A hole is formed on the first and second light emitting cells and the transparent bonding layer. A first route metal is located on a sidewall of the hole and electrically coupled to the second semiconductor layer of the first light emitting cell and the first semiconductor layer of the second light emitting cell. The active layer of the second light emitting cell has an area greater than the active layer of the first light emitting cell.
Public/Granted literature
- US20210399168A1 LIGHT EMITTING DEVICE Public/Granted day:2021-12-23
Information query
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