Invention Grant
- Patent Title: Thin film transistor, manufacturing method of thin film transistor and display device
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Application No.: US16767923Application Date: 2019-12-17
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Publication No.: US11489052B2Publication Date: 2022-11-01
- Inventor: Wenhui Liu , Linchang Zhong
- Applicant: MIANYANG BOE OPTOELECTRONICS TECHNOLOGY CO.,LTD. , BOE Technology Group Co., Ltd.
- Applicant Address: CN Sichuan; CN Beijing
- Assignee: MIANYANG BOE OPTOELECTRONICS TECHNOLOGY CO.,LTD.,BOE Technology Group Co., Ltd.
- Current Assignee: MIANYANG BOE OPTOELECTRONICS TECHNOLOGY CO.,LTD.,BOE Technology Group Co., Ltd.
- Current Assignee Address: CN Sichuan; CN Beijing
- Agency: ArentFox Schiff LLP
- Agent Michael Fainberg
- Priority: CN201910002600.4 20190102
- International Application: PCT/CN2019/126105 WO 20191217
- International Announcement: WO2020/140750 WO 20200709
- Main IPC: H01L29/417
- IPC: H01L29/417 ; H01L29/40 ; H01L29/51 ; H01L29/786

Abstract:
The present disclosure provides a thin film transistor, a manufacturing method of the thin film transistor and a display device, configured to improve electrical property of the thin film transistor. The thin film transistor includes: an active layer, including a source and drain contact region and a channel region; a metal barrier layer, covering the source and drain contact region; a first gate insulating layer, at least covering the channel region and exposing the metal barrier layer; a gate, on the first gate insulating layer and covering the channel region; an inner layer dielectric layer, on the gate and having a through hole exposing the metal barrier layer; and a source and drain, on the inner layer dielectric layer and in contact with the metal barrier layer through the through hole.
Public/Granted literature
- US20210234011A1 THIN FILM TRANSISTOR, MANUFACTURING METHOD OF THIN FILM TRANSISTOR AND DISPLAY DEVICE Public/Granted day:2021-07-29
Information query
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