Invention Grant
- Patent Title: Semiconductor device
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Application No.: US17073401Application Date: 2020-10-19
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Publication No.: US11488985B2Publication Date: 2022-11-01
- Inventor: Ming-Jou Tai , Chia-Hao Tsai
- Applicant: Innolux Corporation
- Applicant Address: TW Miao-Li County
- Assignee: Innolux Corporation
- Current Assignee: Innolux Corporation
- Current Assignee Address: TW Miao-Li County
- Agency: JCIPRNET
- Priority: CN202010817820.5 20200814
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L23/528 ; H01L29/786 ; H01L29/49

Abstract:
A semiconductor device including a substrate, a polysilicon semiconductor layer, and a conductive wire is provided. The polysilicon semiconductor layer is disposed on the substrate. The conductive wire is disposed on the substrate. The conductive wire contacts the polysilicon semiconductor layer through a contact portion. The polysilicon semiconductor layer and the contact portion of the conductive wire respectively have sides aligned with each other. The semiconductor device of the disclosure has good electrical connection, mitigated contact problems, improved reliability, reduced resistivity, increased driving capability, or improved display quality.
Public/Granted literature
- US20210134841A1 SEMICONDUCTOR DEVICE Public/Granted day:2021-05-06
Information query
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