Invention Grant
- Patent Title: Ferroelectric gate oxide based tunnel feFET memory
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Application No.: US16143933Application Date: 2018-09-27
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Publication No.: US11488978B2Publication Date: 2022-11-01
- Inventor: Prashant Majhi , Brian Doyle , Ravi Pillarisetty , Abhishek Sharma , Elijah Karpov
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Schwabe, Williamson & Wyatt, P.C.
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L27/092 ; H01L27/11585 ; H01L29/51 ; H01L29/66 ; H01L29/08
Abstract:
A transistor is disclosed. The transistor includes a p-type region, an intrinsic region coupled to the p-type region, an n-type region coupled to the intrinsic region, and a gate electrode above the intrinsic region. The ferroelectric material is on a bottom, a first side and a second side of the gate electrode, and above the intrinsic region.
Information query
IPC分类:
