Invention Grant
- Patent Title: Method of forming a semiconductor device
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Application No.: US16996527Application Date: 2020-08-18
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Publication No.: US11488963B2Publication Date: 2022-11-01
- Inventor: Mitsunari Sukekawa , Yoshitaka Nakamura
- Applicant: MICRON TECHNOLOGY, INC.
- Applicant Address: US ID Boise
- Assignee: MICRON TECHNOLOGY, INC.
- Current Assignee: MICRON TECHNOLOGY, INC.
- Current Assignee Address: US ID Boise
- Agency: Dorsey & Whitney LLP
- Main IPC: H01L27/108
- IPC: H01L27/108 ; H01L21/311 ; H01L21/18

Abstract:
A method including forming a first member having a first portion including a plurality of storage capacitors therein and a second portion surrounding the first portion; forming a second member of a concave shape having a third portion, which corresponds to a lower top surface of the concave shape, including a plurality of access transistors provided correspondingly to the plurality of storage capacitors therein and a fourth portion, which corresponds to an upper top surface of the concave shape, surrounding the third portion; stacking the first member on the second member to physically connect the second and fourth portions and have a gap between the first and third portions; cutting the first member to physically separate the first portion from the second portion; and joining the separated first portion and the third portion with filling the gap therebetween.
Public/Granted literature
- US20220059545A1 METHOD OF FORMING A SEMICONDUCTOR DEVICE Public/Granted day:2022-02-24
Information query
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