Invention Grant
- Patent Title: Semiconductor device with tapering impurity region and method for fabricating the same
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Application No.: US16867214Application Date: 2020-05-05
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Publication No.: US11488960B2Publication Date: 2022-11-01
- Inventor: Tse-Yao Huang
- Applicant: NANYA TECHNOLOGY CORPORATION
- Applicant Address: TW New Taipei
- Assignee: NANYA TECHNOLOGY CORPORATION
- Current Assignee: NANYA TECHNOLOGY CORPORATION
- Current Assignee Address: TW New Taipei
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Main IPC: H01L27/108
- IPC: H01L27/108 ; H01L29/66 ; H01L29/08
Abstract:
The present application discloses a semiconductor device with a tapering impurity region and the method for fabricating the semiconductor device with the tapering impurity region. The semiconductor device includes a substrate, a word line structure positioned in the substrate, an impurity region including an upper portion positioned adjacent to the word line structure and a lower portion positioned below the upper portion. The upper portion has a tapering cross-sectional profile.
Public/Granted literature
- US20210351185A1 SEMICONDUCTOR DEVICE WITH TAPERING IMPURITY REGION AND METHOD FOR FABRICATING THE SAME Public/Granted day:2021-11-11
Information query
IPC分类:
