Multi-chip device, method of manufacturing a multi-chip device, and method of forming a metal interconnect

Invention Grant

US11488921B2 Multi-chip device, method of manufacturing a multi-chip device, and method of forming a metal interconnect 有权

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Patent Title: Multi-chip device, method of manufacturing a multi-chip device, and method of forming a metal interconnect
Application No.: US17060434

Application Date: 2020-10-01
Publication No.: US11488921B2

Publication Date: 2022-11-01
Inventor: Ali Roshanghias , Alfred Binder , Barbara Eichinger , Stefan Karner , Martin Mischitz , Rainer Pelzer
Applicant: Infineon Technologies AG
Applicant Address: DE Neubiberg
Assignee: Infineon Technologies AG
Current Assignee: Infineon Technologies AG
Current Assignee Address: DE Neubiberg
Agency: Murphy, Bilak & Homiller, PLLC
Priority: DE102019126505.3 20191001
Main IPC: H01L23/00
IPC: H01L23/00 ; H01L25/00 ; H01L25/065

Multi-chip device, method of manufacturing a multi-chip device, and method of forming a metal interconnect

Abstract:

A multi-chip device is provided. The multi-chip device includes a first chip, a second chip mounted on the first chip, and a hardened printed or sprayed electrically conductive material forming a sintered electrically conductive interface between the first chip and the second chip.

Public/Granted literature

US20210098410A1 Multi-Chip Device, Method of Manufacturing a Multi-Chip Device, and Method of Forming a Metal Interconnect Public/Granted day:2021-04-01

Information query

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IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L23/00	半导体或其他固态器件的零部件（H01L25/00优先）