Invention Grant
- Patent Title: Semiconductor package having redistribution layer
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Application No.: US17036702Application Date: 2020-09-29
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Publication No.: US11488910B2Publication Date: 2022-11-01
- Inventor: Young Kun Jee , Il Hwan Kim , Un Byoung Kang
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2018-0075505 20180629
- Main IPC: H01L23/538
- IPC: H01L23/538 ; H01L21/48 ; H01L25/00 ; H01L23/00 ; H01L25/065 ; H01L21/56 ; H01L23/31 ; H01L25/11 ; H01L25/07

Abstract:
A semiconductor package includes a silicon substrate including a cavity and a plurality of through holes spaced apart from the cavity, a first semiconductor chip in the cavity, a plurality of conductive vias in the plurality of through holes, a first redistribution layer on the silicon substrate and connected to the first semiconductor chip and the conductive vias, and a second redistribution layer below the silicon substrate and connected to the first semiconductor chip and the plurality of conductive vias.
Public/Granted literature
- US20210020578A1 SEMICONDUCTOR PACKAGE HAVING REDISTRIBUTION LAYER Public/Granted day:2021-01-21
Information query
IPC分类: