Invention Grant
- Patent Title: Apparatus and method for heat-treating substrate
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Application No.: US16919464Application Date: 2020-07-02
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Publication No.: US11488847B2Publication Date: 2022-11-01
- Inventor: Hiroyuki Miyashita , Shohei Yoshida , Takahisa Mase
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Nath, Goldberg & Meyer
- Agent Jerald L. Meyer; Tanya E. Harkins
- Priority: JPJP2019-131272 20190716
- Main IPC: H01L21/67
- IPC: H01L21/67 ; F27B17/00 ; H01L21/66 ; H01L21/324

Abstract:
An apparatus for heat-treating a substrate includes: a stage where the substrate is disposed; a heating part configured to change an output; a first temperature measurement part configured to measure a temperature at which the substrate is heated; a second temperature measurement part configured to measure the temperature, and having a level of measurement accuracy which is lower than that of the first temperature measurement part in a first temperature region and is higher than that of the first temperature measurement part in a second temperature region; a temperature calculator configured to calculate a weighted average temperature of the temperatures measured by the first and second temperature measurement parts if a reference temperature is in a temperature range between the first and second temperatures, and configured to change a weight of the weighted average temperature; and a controller configured to control the output based on the weighted average temperature.
Public/Granted literature
- US20210020477A1 APPARATUS AND METHOD FOR HEAT-TREATING SUBSTRATE Public/Granted day:2021-01-21
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