Invention Grant
- Patent Title: Method of making semiconductor device package including conformal metal cap contacting each semiconductor die
-
Application No.: US16705334Application Date: 2019-12-06
-
Publication No.: US11488842B2Publication Date: 2022-11-01
- Inventor: Chen-Yu Tsai , Tsung-Shang Wei , Yu-Sheng Lin , Wen-Chih Chiou , Shin-Puu Jeng
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L21/56
- IPC: H01L21/56 ; H01L25/065 ; H01L25/00 ; H01L23/60 ; H01L21/48 ; H01L23/538 ; H01L23/00 ; H01L21/683 ; H01L23/16 ; H01L23/31 ; H01L23/29 ; H01L23/498
Abstract:
A method of manufacturing a semiconductor device includes bonding a first semiconductor die and a second semiconductor die to a first substrate, forming a conductive layer over the first semiconductor die, the second semiconductor die, and the first substrate, applying an encapsulant over the conductive layer, and removing a portion of the encapsulant, wherein the removing the portion of the encapsulant exposes the conductive layer.
Information query
IPC分类:
