Invention Grant
- Patent Title: Semiconductor memory having both volatile and non-volatile functionality and method of operating
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Application No.: US17087884Application Date: 2020-11-03
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Publication No.: US11488665B2Publication Date: 2022-11-01
- Inventor: Yuniarto Widjaja
- Applicant: Zeno Semiconductor, Inc.
- Applicant Address: US CA Sunnyvale
- Assignee: Zeno Semiconductor, Inc.
- Current Assignee: Zeno Semiconductor, Inc.
- Current Assignee Address: US CA Sunnyvale
- Agency: Law Office of Alan W. Cannon
- Main IPC: G11C14/00
- IPC: G11C14/00 ; H01L27/105 ; H01L27/108 ; H01L29/40 ; H01L29/78 ; H01L21/28 ; G11C11/404 ; G11C16/04 ; H01L27/11521 ; H01L27/11526 ; H01L27/11531 ; H01L27/11568 ; H01L27/11573 ; H01L29/423 ; H01L29/66 ; H01L29/788 ; H01L29/792 ; G11C16/22 ; H01L29/06 ; H01L21/84 ; H01L27/12

Abstract:
Semiconductor memory having both volatile and non-volatile modes and methods of operation. A semiconductor storage device includes a plurality of memory cells each having a floating body for storing, reading and writing data as volatile memory. The device includes a floating gate or trapping layer for storing data as non-volatile memory, the device operating as volatile memory when power is applied to the device, and the device storing data from the volatile memory as non-volatile memory when power to the device is interrupted.
Public/Granted literature
- US20210050059A1 Semiconductor Memory Having Both Volatile and Non-Volatile Functionality and Method of Operating Public/Granted day:2021-02-18
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