A magnetic random access memory (MRAM) array includes a plurality of MRAM cells, each of the MRAM cells including a magnetic tunnel junction (MTJ) stack disposed on a bottom metal via connecting the MTJ stack to a bottom conductive contact in a substrate, a plurality of top conductive contacts, each of the top conductive contacts disposed on a respective one of the MTJ stacks, and a plurality of unitary structures configured as a heat sink/magnetic shield disposed on a vertical portions of each of the MRAM cells, including vertical portions of the bottom metal vias, and under a portion of each of the MTJ stacks.