- Patent Title: Structure and formation method of semiconductor device structure
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Application No.: US16505917Application Date: 2019-07-09
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Publication No.: US11444176B2Publication Date: 2022-09-13
- Inventor: Po-Chi Wu , Chai-Wei Chang , Kuo-Hui Chang , Yi-Cheng Chao
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/78 ; H01L29/49
Abstract:
Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a gate stack over a semiconductor substrate and a cap element over the gate stack. The cap element has an upper portion and a lower portion, and the upper portion is wider than the lower portion. The semiconductor device structure also includes a spacer element over a sidewall of the cap element and a sidewall of the gate stack.
Public/Granted literature
- US20190334016A1 Structure and Formation Method of Semiconductor Device Structure Public/Granted day:2019-10-31
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