- Patent Title: Method for producing semiconductor device and semiconductor device
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Application No.: US16756109Application Date: 2017-12-01
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Publication No.: US11444172B2Publication Date: 2022-09-13
- Inventor: Atsushi Era
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- International Application: PCT/JP2017/043345 WO 20171201
- International Announcement: WO2019/106843 WO 20190606
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L21/02 ; H01L29/20 ; H01L29/205 ; H01L29/778
Abstract:
Examples of a method for producing a semiconductor device includes: forming a barrier layer having a composition of InAlN or InAlGaN over a channel layer; forming a transition layer having a composition of InGaN on the barrier layer while raising a growth temperature; and forming a cap layer of GaN on the transition layer.
Public/Granted literature
- US20200243668A1 METHOD FOR PRODUCING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE Public/Granted day:2020-07-30
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