Invention Grant
- Patent Title: Fabrication of fin field effect transistors utilizing different fin channel materials while maintaining consistent fin widths
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Application No.: US16866150Application Date: 2020-05-04
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Publication No.: US11444083B2Publication Date: 2022-09-13
- Inventor: Kangguo Cheng , Juntao Li , Peng Xu
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Randall Bluestone
- Main IPC: H01L27/092
- IPC: H01L27/092 ; H01L29/66 ; H01L29/10 ; H01L27/088 ; H01L21/8238 ; H01L21/8234 ; H01L29/161

Abstract:
A method of forming vertical fins on a substrate at the same time, the method including, forming a mask segment on a first region of the substrate while exposing the surface of a second region of the substrate, removing a portion of the substrate in the second region to form a recess, forming a fin layer in the recess, where the fin layer has a different material composition than the substrate, and forming at least one vertical fin on the first region of the substrate and at least one vertical fin on the second region of the substrate, where the vertical fin on the second region of the substrate includes a fin layer pillar formed from the fin layer and a substrate pillar.
Public/Granted literature
Information query
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