Invention Grant
- Patent Title: Manufacturing method of semiconductor apparatus and semiconductor apparatus
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Application No.: US17002189Application Date: 2020-08-25
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Publication No.: US11444055B2Publication Date: 2022-09-13
- Inventor: Shinichiro Watanabe , Youichi Fukaya
- Applicant: CANON KABUSHIKI KAISHA
- Applicant Address: JP Tokyo
- Assignee: CANON KABUSHIKI KAISHA
- Current Assignee: CANON KABUSHIKI KAISHA
- Current Assignee Address: JP Tokyo
- Agency: Canon U.S.A., Inc., IP Division
- Priority: JPJP2019-157290 20190829
- Main IPC: H01L23/00
- IPC: H01L23/00

Abstract:
A manufacturing method of a semiconductor apparatus includes preparing an intermediate member that includes a first member having a first substrate comprising a semiconductor element formed thereon, a second member having a second substrate, the second substrate including a part of a circuit electrically connected to the semiconductor element and having a linear expansion coefficient different from that of the first substrate, and a third member having a third substrate showing such a linear expansion coefficient that a difference between itself and the linear expansion coefficient of the first substrate is smaller than a difference between the linear expansion coefficients of the first substrate and the second substrate, and includes bonding the first member and the second member together. A first bonding electrode containing copper electrically connected to the semiconductor element and a second bonding electrode containing copper electrically connected to the circuit are bonded together.
Public/Granted literature
- US20210066241A1 MANUFACTURING METHOD OF SEMICONDUCTOR APPARATUS AND SEMICONDUCTOR APPARATUS Public/Granted day:2021-03-04
Information query
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