Invention Grant
- Patent Title: Fully molded semiconductor structure with face mounted passives and method of making the same
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Application No.: US17532475Application Date: 2021-11-22
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Publication No.: US11444051B2Publication Date: 2022-09-13
- Inventor: Clifford Sandstrom , Benedict San Jose , Timothy L. Olson , Craig Bishop
- Applicant: Deca Technologies USA, Inc.
- Applicant Address: US AZ Tempe
- Assignee: Deca Technologies USA, Inc.
- Current Assignee: Deca Technologies USA, Inc.
- Current Assignee Address: US AZ Tempe
- Agency: Booth Udall Fuller, PLC
- Agent Bryce W. Burnham
- Main IPC: H01L23/52
- IPC: H01L23/52 ; H01L23/00 ; H01L25/065 ; H01L25/10

Abstract:
A semiconductor device, and method of making the same, comprising a plurality of conductive studs formed over an active surface of a semiconductor die. The plurality of conductive studs may be disposed around a device mount site, wherein the device mount site comprises conductive interconnects comprising a height less than a height of the plurality of conductive studs. An encapsulant may be disposed around the semiconductor die and the conductive studs. A portion of the conductive studs may be exposed from the encapsulant at a planar surface. A build-up interconnect structure comprising one or more layers may be disposed over and coupled to the planar surface, the conductive studs, and the conductive interconnect. A device may be coupled to the conductive interconnects of the device mount site.
Public/Granted literature
- US20220173067A1 FULLY MOLDED SEMICONDUCTOR STRUCTURE WITH FACE MOUNTED PASSIVES AND METHOD OF MAKING THE SAME Public/Granted day:2022-06-02
Information query
IPC分类: