A semiconductor structure includes an interlayer dielectric layer, a first set of back-end-of-line interconnect structures disposed in the interlayer dielectric layer, and a second set of back-end-of-line interconnect structures at least partially disposed in the interlayer dielectric layer. Each of the first set of back-end-of-line interconnect structures has a first width and a first height providing a first aspect ratio. Each of the second set of back-end-of-line interconnect structures has a second width and a second height providing a second aspect ratio different than the first aspect ratio. The second width is greater than the first width, and the second height is different than the first height.