A semiconductor device includes a semiconductor chip including a substrate and a MEMS element, wherein the substrate includes a surface, and wherein the MEMS element is disposed at the surface of the substrate and the MEMS element includes a sensitive area; a first electrical interconnect structure electrically connected to the surface of the substrate; a carrier electrically connected to the first electrical interconnect structure; and a first stress relieve spring entrenched in the carrier, wherein the first stress relieve spring is a single integral channel that comprises two parallel channels that join together at a periphery of the first electrical interconnect structure to form the single integral channel that wraps around a portion of the periphery of the first electrical interconnect structure, wherein the two parallel channels extend outward, in parallel, from the periphery of the first electrical interconnect structure to a first termination region of the carrier.