Invention Grant
- Patent Title: Two-level error correcting code with sharing of check-bits
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Application No.: US16925361Application Date: 2020-07-10
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Publication No.: US11438015B2Publication Date: 2022-09-06
- Inventor: Shih-Lien Linus Lu
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Merchant & Gould P.C.
- Main IPC: H03M13/29
- IPC: H03M13/29 ; G11C29/42 ; G11C29/44 ; H03M13/11 ; H03M13/15

Abstract:
A memory device includes: a memory device configured to store data bits to be written to the memory device; and a memory controller. The memory controller includes: a first level error correction code (ECC) circuit coupled to the memory device, wherein the first level ECC circuit is configured to generate a first plurality of first level check bits corresponding to the data bits based on a first error detection scheme; and a second level ECC circuit coupled to the memory device, wherein the second level ECC circuit is configured to generate a second plurality of second level check bits corresponding to both the data bits and the first plurality of first level check bits based on a first error correction scheme.
Public/Granted literature
- US20220014213A1 TWO-LEVEL ERROR CORRECTING CODE WITH SHARING OF CHECK-BITS Public/Granted day:2022-01-13
Information query
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