Invention Grant
- Patent Title: III-V lateral bipolar junction transistor on local facetted buried oxide layer
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Application No.: US16661446Application Date: 2019-10-23
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Publication No.: US11437502B2Publication Date: 2022-09-06
- Inventor: Pouya Hashemi , Mahmoud Khojasteh , Tak H. Ning , Alexander Reznicek
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent L. Jeffrey Kelly
- Main IPC: H01L29/737
- IPC: H01L29/737 ; H01L29/06 ; H01L29/66 ; H01L29/205 ; H01L21/762 ; H01L21/306
Abstract:
A bipolar junction transistor (LBJT) device that includes a base region of a first III-V semiconductor material having A first band gap; and emitter and collector regions present on opposing sides of the base region, wherein the emitter and collector regions are comprised of a second III-V semiconductor material having a wider band gap than the first III-V semiconductor material. A dielectric region is present underlying the base region, emitter region and the collect region. The dielectric region has an inverted apex geometry. The sidewalls of dielectric region that extend to the apex of the inverted apex geometry are present on facets of a supporting substrate III-V semiconductor material having a {110} crystalline orientation.
Public/Granted literature
- US20200058776A1 III-V LATERAL BIPOLAR JUNCTION TRANSISTOR ON LOCAL FACETTED BURIED OXIDE LAYER Public/Granted day:2020-02-20
Information query
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