A semiconductor memory includes: a substrate including a cell region, first and second peripheral circuit regions disposed on two sides of the cell region; first lines extending across the cell region and the first peripheral circuit region; second lines disposed over the first lines and extending across the cell region and the second peripheral circuit region; a contact plug disposed in the second peripheral circuit region and connected to the second line; third lines disposed over the second lines and respectively overlapping the second lines; and first memory cells disposed in the cell region and located at intersections of the first lines and the second lines between the first lines and the second lines, wherein a portion of the third line, located in the cell region contacts the second line, and another portion of the third line located over the contact plug is spaced apart from the second line.