Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
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Application No.: US17155834Application Date: 2021-01-22
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Publication No.: US11437390B2Publication Date: 2022-09-06
- Inventor: Kang Sik Choi
- Applicant: SK hynix Inc.
- Applicant Address: KR Icheon-si
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Icheon-si
- Agency: William Park & Associates Ltd.
- Priority: KR10-2017-0025707 20170227
- Main IPC: H01L27/11556
- IPC: H01L27/11556 ; H01L27/11582 ; H01L29/06 ; H01L27/11565 ; H01L29/08 ; H01L27/11519 ; H01L29/78

Abstract:
Provided herein may be a semiconductor device. The semiconductor device may include a stack. The semiconductor device may include channel layers including channel patterns passing through the stack, dummy channel patterns passing through the stack, and a coupling pattern which may be disposed below the stack and couples the channel patterns with the dummy channel patterns. The semiconductor device may include a bit line which is disposed on the stack and coupled with the channel patterns. The semiconductor device may include a well pick-up line which is disposed on the stack and coupled with the dummy channel patterns.
Public/Granted literature
- US20210151453A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2021-05-20
Information query
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