Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
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Application No.: US16775557Application Date: 2020-01-29
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Publication No.: US11437339B2Publication Date: 2022-09-06
- Inventor: Daisuke Koike , Fumiyoshi Kawashiro
- Applicant: Kabushiki Kaisha Toshiba , Toshiba Electronic Devices & Storage Corporation
- Applicant Address: JP Tokyo; JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba,Toshiba Electronic Devices & Storage Corporation
- Current Assignee: Kabushiki Kaisha Toshiba,Toshiba Electronic Devices & Storage Corporation
- Current Assignee Address: JP Tokyo; JP Tokyo
- Agency: Allen & Overy LLP
- Priority: JPJP2019-159281 20190902
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L23/495

Abstract:
A semiconductor device according to an embodiment includes a lead frame, a semiconductor chip provided above the lead frame, and a bonding material including a sintered material containing a predetermined metal material and a predetermined resin, where the bonding material includes a first portion provided between the lead frame and the semiconductor chip, and a second portion provided on the lead frame around the semiconductor chip, where the bonding material bonds the lead frame and the semiconductor chip, wherein an angle formed by a lower face of the semiconductor chip and an upper face of the second portion adjacent to the lower face is 80 degrees or less.
Public/Granted literature
- US11476223B2 Semiconductor device and manufacturing method thereof Public/Granted day:2022-10-18
Information query
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