Invention Grant
- Patent Title: Semiconductor module and method for producing the same
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Application No.: US16951556Application Date: 2020-11-18
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Publication No.: US11437311B2Publication Date: 2022-09-06
- Inventor: Olaf Hohlfeld , Peter Kanschat
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Priority: EP17207680 20171215
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L23/498 ; H01L23/367 ; H01L23/40 ; H01L23/31 ; H01L23/24 ; H01L21/56 ; H01L25/07 ; H01L23/00

Abstract:
A method for producing a power semiconductor module arrangement includes arranging two or more individual semiconductor devices on a base layer, each semiconductor device including a lead frame, a semiconductor body arranged on the lead frame, and a molding material enclosing the semiconductor body and at least part of the lead frame, arranging a frame on the base layer such that the frame surrounds the two or more individual semiconductor devices, and filling a first material into a capacity formed by the base layer and the frame, and hardening the first material to form a casting compound that at least partly fills the capacity, thereby at least partly encloses the two or more individual semiconductor devices.
Public/Granted literature
- US20210074624A1 Semiconductor Module and Method for Producing the Same Public/Granted day:2021-03-11
Information query
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