Invention Grant
- Patent Title: High voltage logic circuit
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Application No.: US17140806Application Date: 2021-01-04
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Publication No.: US11411000B2Publication Date: 2022-08-09
- Inventor: Pilsoon Choi , Chirn-Chye Boon , Li-Shiuan Peh
- Applicant: Massachusetts Institute of Technology , Nanyang Technological University
- Applicant Address: US MA Cambridge; SG Singapore
- Assignee: Massachusetts Institute of Technology,Nanyang Technological University
- Current Assignee: Massachusetts Institute of Technology,Nanyang Technological University
- Current Assignee Address: US MA Cambridge; SG Singapore
- Agency: Volpe Koenig
- Main IPC: H03K19/0185
- IPC: H03K19/0185 ; H01L27/092 ; G05F1/595 ; G05F3/24 ; H01L27/06 ; H01L29/16 ; H01L29/20 ; H01L29/78 ; H02P8/12 ; H03K19/0948 ; H03K19/20

Abstract:
A high voltage logic circuit for high voltage system application comprises a first device layer formed from a first semiconductor material and comprises a low voltage logic circuit; and a second device layer formed from a second different semiconductor material and comprising one or more components of an additional circuit for generating a high voltage logic output from a low voltage logic input from the low voltage logic circuit; wherein the first and second device layers are integrally formed. Also, a logic circuit comprising: a low voltage logic input; a high supply voltage input; a circuit ground voltage input; a high voltage output; a first tail device made from a first semiconductor material; and a second tail device made from a second different semiconductor material; wherein the first and second tail devices are coupled, in series, between the high voltage output and the circuit ground voltage input; and wherein respective gates of the first and second tail devices are coupled, in parallel, to the low voltage logic input.
Public/Granted literature
- US20210151436A1 HIGH VOLTAGE LOGIC CIRCUIT Public/Granted day:2021-05-20
Information query
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