Invention Grant
- Patent Title: Semiconductor structure and method for forming thereof
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Application No.: US17103679Application Date: 2020-11-24
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Publication No.: US11410927B2Publication Date: 2022-08-09
- Inventor: Jen-Yuan Chang , Chia-Ping Lai
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT, P.C. Intellectual Property Attorneys
- Agent Anthony King
- Main IPC: H01L23/525
- IPC: H01L23/525 ; H01L23/48 ; H01L23/522 ; H01L23/528 ; H01L23/10 ; H01L23/00

Abstract:
A semiconductor structure and a method for forming the semiconductor structure are disclosed. The method includes receiving a first integrated circuit component having a seal ring and a fuse structure, wherein the fuse structure is electrically connected to a ground through the seal ring; receiving a second integrated circuit component having an inductor; bonding the second integrated circuit component to the first integrated circuit component; electrically connecting the inductor to the fuse structure, wherein the inductor is electrically connected to the ground through the fuse structure; and blowing the fuse structure after a treatment.
Public/Granted literature
- US20220165665A1 SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THEREOF Public/Granted day:2022-05-26
Information query
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