Invention Grant
- Patent Title: Semiconductor devices
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Application No.: US16909019Application Date: 2020-06-23
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Publication No.: US11409598B2Publication Date: 2022-08-09
- Inventor: Sang Sic Yoon
- Applicant: SK hynix Inc.
- Applicant Address: KR Icheon-si
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Icheon-si
- Agency: William Park & Associates Ltd.
- Priority: KR10-2020-0032663 20200317
- Main IPC: G06F11/10
- IPC: G06F11/10 ; H03M13/15 ; G11C7/10 ; G11C29/44 ; G11C29/52 ; G06F11/07 ; G11C11/4096

Abstract:
A semiconductor device includes a selection input circuit and a core data generation circuit. The selection input circuit is configured to generate selection data, a selection parity, and a selection data control signal from data, a parity, and a data control signal during a write operation and sets the selection data, the selection parity, and the selection data control signal to a predetermined logic level during a pattern write operation. The core data generation circuit is configured to receive drive data, a drive parity, and a drive data control signal driven by the selection data, the selection parity, and the selection data control signal to generate core data which are stored into a memory core according to whether an error correction operation and a data inversion operation is performed.
Public/Granted literature
- US20210294693A1 SEMICONDUCTOR DEVICES Public/Granted day:2021-09-23
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