Invention Grant
- Patent Title: Pixel structure, image sensor device and system with pixel structure, and method of operating the pixel structure
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Application No.: US16771288Application Date: 2018-12-10
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Publication No.: US11405602B2Publication Date: 2022-08-02
- Inventor: Guy Meynants
- Applicant: ams AG
- Applicant Address: AT Premstaetten
- Assignee: ams AG
- Current Assignee: ams AG
- Current Assignee Address: AT Premstaetten
- Agency: MH2 Technology Law Group LLP
- Priority: EP17207772 20171215
- International Application: PCT/EP2018/084188 WO 20181210
- International Announcement: WO2019/115459 WO 20190620
- Main IPC: H04N13/254
- IPC: H04N13/254 ; H04N5/374 ; H04N5/378 ; H04N5/3745 ; G01B11/25 ; H01L27/146
Abstract:
A photodetector in semiconductor material is provided with a first transfer gate between the photodetector and a first diffusion region in the semiconductor material, a second transfer gate between the photodetector and a second diffusion region in the semiconductor material, a capacitor connected between the first diffusion region and the second diffusion region, a first switch connected between the first diffusion region and a first reference voltage, and a second switch connected between the second diffusion region and a second reference voltage.
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