Invention Grant
- Patent Title: Semiconductor device
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Application No.: US17204003Application Date: 2021-03-17
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Publication No.: US11381237B2Publication Date: 2022-07-05
- Inventor: Yasuyuki Fujiwara , Yiyao Liu , Yusuke Sato , Naotsugu Kako , Hideaki Majima
- Applicant: Kabushiki Kaisha Toshiba , Toshiba Electronic Devices & Storage Corporation
- Applicant Address: JP Tokyo; JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba,Toshiba Electronic Devices & Storage Corporation
- Current Assignee: Kabushiki Kaisha Toshiba,Toshiba Electronic Devices & Storage Corporation
- Current Assignee Address: JP Tokyo; JP Tokyo
- Agency: Allen & Overy LLP
- Priority: JPJP2020-157674 20200918
- Main IPC: H03K17/693
- IPC: H03K17/693 ; H03K17/22

Abstract:
A semiconductor device that normally-off drives a first transistor that normally-on drives, the semiconductor device includes a first circuitry, a second circuitry, and a first diode. The first circuitry that is connected with a power supply voltage and a ground voltage, detects the power supply voltage, and outputs a transition state of the power supply voltage. The second circuitry that is connected with the power supply voltage, the ground voltage, the first circuitry, and a second transistor, and outputs a drive voltage of a second transistor connected in series with the first transistor, based on an output of the first circuitry. The first diode having an anode connected with a drive terminal of the first transistor and a cathode connected with an output terminal of the second transistor.
Public/Granted literature
- US20220094353A1 SEMICONDUCTOR DEVICE Public/Granted day:2022-03-24
Information query
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