Invention Grant
- Patent Title: Semiconductor light emitting device
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Application No.: US15932000Application Date: 2020-05-14
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Publication No.: US11380818B2Publication Date: 2022-07-05
- Inventor: Jongin Yang , Hankyu Seong , Sunghyun Sim , Jihye Yeon , Hanul Yoo , Jihoon Yun
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Lee IP Law, P.C.
- Priority: KR10-2019-0158788 20191203
- Main IPC: H01L33/24
- IPC: H01L33/24 ; H01L33/50 ; H01L33/38 ; H01L33/44 ; H01L33/62 ; H01L27/15 ; H01L33/00

Abstract:
A semiconductor light emitting device including at least one light emitting structure on a substrate, the at least one light emitting structure including a first semiconductor pattern, an active pattern, and a second semiconductor pattern sequentially stacked in a vertical direction substantially perpendicular to an upper surface of the substrate; a first electrode contacting a substrate-facing surface of the first semiconductor pattern; and a second electrode at least partially surrounding and contacting a sidewall of the second semiconductor pattern.
Public/Granted literature
- US20210167248A1 SEMICONDUCTOR LIGHT EMITTING DEVICE Public/Granted day:2021-06-03
Information query
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