An integrated circuit comprising an SGT MOSFET and a short channel SBR is disclosed. The SBR horizontally disposed in different areas to the SGT MOSFET on single chip creates a low potential barrier for majority carrier in MOS channel for switching loss reduction. Only one additional mask is required for integration of the short channel SBR having thinner gate oxide than the SGT MOSFET. Moreover, in some preferred embodiment, an MSO structure is applied to the shielded gate structure to further reduce the on-resistance.