Invention Grant
- Patent Title: Structure and intermediate structure
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Application No.: US16288376Application Date: 2019-02-28
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Publication No.: US11380765B2Publication Date: 2022-07-05
- Inventor: Fumimasa Horikiri
- Applicant: SCIOCS COMPANY LIMITED , SUMITOMO CHEMICAL COMPANY, LIMITED
- Applicant Address: JP Ibaraki; JP Tokyo
- Assignee: SCIOCS COMPANY LIMITED,SUMITOMO CHEMICAL COMPANY, LIMITED
- Current Assignee: SCIOCS COMPANY LIMITED,SUMITOMO CHEMICAL COMPANY, LIMITED
- Current Assignee Address: JP Ibaraki; JP Tokyo
- Agency: Pearne & Gordon LLP
- Priority: JPJP2018-037473 20180302,JPJP2018-133632 20180713
- Main IPC: H01L29/15
- IPC: H01L29/15 ; H01L31/0256 ; H01L29/20 ; H01L29/06 ; H01L21/02 ; H01L21/302 ; H01L33/00 ; H01L29/861 ; H01L29/872 ; H01L29/78
Abstract:
This invention provides a novel structure formed from GaN material using PEC etching. The structure comprises a member constituted by a single crystal of gallium nitride and the member includes a recess having an aspect ratio of 5 or more.
Public/Granted literature
- US20190273139A1 STRUCTURE AND INTERMEDIATE STRUCTURE Public/Granted day:2019-09-05
Information query
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