Invention Grant
- Patent Title: Memory device having vertical structure
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Application No.: US17145209Application Date: 2021-01-08
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Publication No.: US11380702B2Publication Date: 2022-07-05
- Inventor: Jin Ho Kim , Kwang Hwi Park , Sang Hyun Sung , Sung Lae Oh , Chang Woon Choi
- Applicant: SK hynix Inc.
- Applicant Address: KR Icheon-si
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Icheon-si
- Priority: KR10-2020-0082736 20200706
- Main IPC: H01L27/11556
- IPC: H01L27/11556 ; H01L27/11573 ; H01L27/11582 ; H01L27/11526

Abstract:
A memory device includes a cell wafer including a memory cell array; and a peripheral wafer including a row control circuit, a column control circuit and a peripheral circuit which control the memory cell array, and stacked on and bonded to the cell wafer in a first direction. The peripheral wafer includes a first substrate having a first surface and a second surface which face away from each other in the first direction; a first logic structure disposed on the first surface of the first substrate, and including the row control circuit and the column control circuit; and a second logic structure disposed on the second surface of the first substrate, and including the peripheral circuit.
Public/Granted literature
- US20220005820A1 MEMORY DEVICE HAVING VERTICAL STRUCTURE Public/Granted day:2022-01-06
Information query
IPC分类: