A semiconductor memory device, a method of manufacturing the same, and an electronic device including the semiconductor memory device are disclosed. According to an embodiment, the semiconductor memory device may include a substrate; an array of memory cells provided on the substrate, wherein the memory cells are arranged in rows and columns, each of the memory cells comprises a pillar-shaped active region extending vertically, wherein the pillar-shaped active region comprises source/drain regions at upper and lower ends respectively and a channel region between the source/drain regions; and a plurality of bit lines formed on the substrate, wherein each of the bit lines is located below a corresponding one of the columns of memory cells and is electrically connected to the source/drain regions at lower ends of the respective memory cells in the corresponding column, wherein each of the memory cells further comprises a gate stack formed around a periphery of a corresponding channel region, and a respective one of the rows of memory cells has gate conductor layers included in the gate stacks of the respective memory cells in the row extending continuously in a direction of the row to form a corresponding one of word lines.