Invention Grant
- Patent Title: Metamorphic high electron mobility transistor-heterojunction bipolar transistor integration
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Application No.: US16899811Application Date: 2020-06-12
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Publication No.: US11380678B2Publication Date: 2022-07-05
- Inventor: Ranadeep Dutta , Je-Hsiung Lan , Jonghae Kim
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Patterson+ Sheridan, L.L.P.
- Main IPC: H01L27/06
- IPC: H01L27/06 ; H01L21/8252 ; H01L29/66
Abstract:
A semiconductor device having metamorphic high electron mobility transistor (HEMT)-heterojunction bipolar transistor (HBT) integration on a semiconductor substrate. An example semiconductor device generally includes a semiconductor substrate, a bipolar junction transistor (BJT) disposed above the semiconductor substrate and comprising indium, and a HEMT disposed above the semiconductor substrate and comprising indium.
Public/Granted literature
- US20210391321A1 METAMORPHIC HIGH ELECTRON MOBILITY TRANSISTOR-HETEROJUNCTION BIPOLAR TRANSISTOR INTEGRATION Public/Granted day:2021-12-16
Information query
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