Invention Grant
- Patent Title: Methods of forming microelectronic devices
-
Application No.: US16905734Application Date: 2020-06-18
-
Publication No.: US11380669B2Publication Date: 2022-07-05
- Inventor: Kunal R. Parekh
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: TraskBritt
- Main IPC: H01L25/00
- IPC: H01L25/00 ; H01L27/11556 ; H01L27/11582

Abstract:
A method of forming a microelectronic device comprises forming a source material around substantially an entire periphery of a base material, and removing the source material from lateral sides of the base material while maintaining the source material over an upper surface and a lower surface of the base material. Related methods and base structures for microelectronic devices are also described.
Public/Granted literature
- US20210398967A1 METHODS OF FORMING MICROELECTRONIC DEVICES, AND RELATED BASE STRUCTURES FOR MICROELECTRONIC DEVICES Public/Granted day:2021-12-23
Information query
IPC分类: