Invention Grant
- Patent Title: Interconnect structures of semiconductor devices having a via structure through an upper conductive line
-
Application No.: US16185015Application Date: 2018-11-09
-
Publication No.: US11380581B2Publication Date: 2022-07-05
- Inventor: Andre P. Labonte , Catherine B Labelle , Chanro Park
- Applicant: GLOBALFOUNDRIES U.S. INC.
- Applicant Address: US CA Santa Clara
- Assignee: GLOBALFOUNDRIES U.S. INC.
- Current Assignee: GLOBALFOUNDRIES U.S. INC.
- Current Assignee Address: US CA Santa Clara
- Agent Anthony Canale
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L21/311 ; H01L23/528
Abstract:
A method of fabricating an interconnect structure of a semiconductor device is provided having a first conductive line and forming a second conductive line over the first conductive line. A via opening is formed in the second conductive line, and the via opening is aligned over the first conductive line. The via opening is filled with a conductive material to form an interconnect via and an upper portion of the interconnect via forms a portion of the second conductive line.
Public/Granted literature
- US20200152512A1 INTERCONNECT STRUCTURES OF SEMICONDUCTOR DEVICES Public/Granted day:2020-05-14
Information query
IPC分类:
